au.\*:("WATTS, R. K")
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Gate current in 0•75μm N-channel MOSFETs with doubly diffused drainWATTS, R. K; MANCHANDA, L; JOHNSTON, R. L et al.Electronics Letters. 1987, Vol 23, Num 9, pp 468-469, issn 0013-5194Article
Tenth-micron polysilicon thin-film transistorsWATTS, R. K; LEE, J. T. C.IEEE electron device letters. 1993, Vol 14, Num 11, pp 515-517, issn 0741-3106Article
Alcoholic beverage licensing practices in California : a study of a regulatory agencyRABOW, J; WATTS, R. K; HERNANDEZ, A. C. R et al.Alcoholism, clinical and experimental research. 1993, Vol 17, Num 2, pp 241-245, issn 0145-6008Article
Shallow junction for 0.1 μm n-type metal-oxide semiconductor devicesWATTS, R. K; LUFTMAN, H. S; BAIOCCHI, F. A et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 1, pp 515-523, issn 0734-211XConference Paper
Ultimate resolution and contrast in ion-beam lithographyGILES, M. D; WATTS, R. K; LABATE, E et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1987, Vol 5, Num 6, pp 1588-1590, issn 0734-211XArticle
Measurement of perfusion pressure of perforators and its correlation with their internal diameterBHATTACHARYA, V; DESHPANDE, S. B; WATTS, R. K et al.British journal of plastic surgery. 2005, Vol 58, Num 6, pp 759-764, issn 0007-1226, 6 p.Conference Paper
89-GHzfT room-temperature silicon MOSFET'sRAN-HONG YAN; LEE, K. F; EARLY, K et al.IEEE electron device letters. 1992, Vol 13, Num 5, pp 256-258, issn 0741-3106Article
Smart Sentencing. The Emergence of Intermediate SanctionsLURIGIO, A. J; PETERSILIA, J; MARX, G. T et al.1992, 352 p., isbn 0-8039-4165-XBook
High-speed low-power circuits fabricated using a submicron NMOS technologyFICHTNER, W; HOFSTATTER, E. A; WATTS, R. K et al.IEEE electron device letters. 1985, Vol 6, Num 12, pp 662-664, issn 0741-3106Article
